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Films of TaxCu1-x have been produced in a co-sputtering system with dc- and rf-sputtering guns and a substrate attached to a rapidly rotating, water-cooled table. Samples were produced in the composition range 0.1≤x≤0.9. X-ray diffraction and electrical resistivity data between 4.2 and 300 K have been obtained. Diffraction measurements show that for 0.6≤x≤0.9 the samples are glassy. The room-temperature resistivities follow the Mooij correlation with a zero temperature coefficient of resistivity at a resistivity of 35 μΩ cm. The resistivity-versus-temperature data for Ta0.90Cu0.10 are compared to the extended Ziman-Faber theory and a localization theory by Kaveh and Mott. Of these two theories, the Kaveh-Mott theory best describes the experimental results. Ultraviolet and x-ray photoemission measurements have been made as a function of composition. The position of the Cu 3x levels appears to be correlated with the amorphous or crystalline character of the structure. A linear muffin-tin-orbital calculation of the electronic structure of amorphous Ta0.59Cu0.41 has been performed. The calculation, based on a periodically extended amorphous cluster of 39 atoms, gave an electronic density of states in good agreement with photoemission results.