Growth of WS₂ Thin Photovoltaic Films

Authors

• Matthew J. Hilfiker, University of Nebraska-LincolnFollow
• Aaron Ediger, University of Nebraska-LincolnFollow
• Natale lanno, University of Nebraska-LincolnFollow

Date of this Version

4-2016

Document Type

Poster

Citation

Hilfiker, M., Ediger, E., Ianno, N. (2016) Growth of WS2 Thin Photovoltaic Films. UCARE Poster session, University of Nebraska-Lincoln Research Fair, April 2016, Lincoln, NE.

Comments

Copyright © 2016 Matthew Hilfiker, Aaron Ediger, and Natale Ianno

Abstract

Through research for a material that is low cost, earth abundant, and highly efficient, Tungsten Sulfide (WS₂) has been identified as a promising solution. From literature, it has been shown that WS₂ possesses a band gap of 1.9 eV, which is ideal for a top layer heterostructure cell. While this is a favorable value, other properties needed to understand its value as a photovoltaic material are unknown. Through research, WS₂ films will be grown through a sputtering deposition process and electrical characterization measurements will be performed to study these missing properties.