Ellipsometric Study of Single-Crystal γ-Inse From 1.5 To 9.2 Ev

Authors

• S. G. Choi, National Renewable Energy Laboratory, Golden, Colorado 80401, USA
• D. E. Aspnes, Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, USA
• A. L. Fuchser, J.A. Woollam Co. Inc., Lincoln, Nebraska 68508, USA
• C. Martinez-Tomas, Departamento de Física Aplicada i Electromagnetismo, Universitat de València, C/Dr. Moliner 50, 46100 Burjassot, Spain
• V. Muñoz Sanjosé, Departamento de Física Aplicada i Electromagnetismo, Universitat de València, C/Dr. Moliner 50, 46100 Burjassot, Spain
• D. H. Levi, National Renewable Energy Laboratory, Golden, Colorado 80401, USA

Date of this Version

2010

Comments

Published in APPLIED PHYSICS LETTERS 96, 181902 (2010).

Abstract

We report the component E ┴ c of the pseudodielectric-function tensor <ε(E)> = <ε₁(E)> + i< ε₂(E)> of γ-phase single-crystal InSe, obtained from 1.5 to 9.2 eV by vacuum-ultraviolet spectroscopic ellipsometry with the sample at room temperature. Overlayer artifacts were reduced as far as possible by measuring fresh surfaces prepared by cleavage. Accurate critical-point energies of observed structures were obtained by a combined method of spectral analysis.