Center, Materials and Nanoscience, Nebraska Center for
Nebraska Center for Materials and Nanoscience: Faculty Publications
Accessibility Remediation
If you are unable to use this item in its current form due to accessibility barriers, you may request remediation through our remediation request form.
Document Type
Article
Date of this Version
2009
Abstract
The noncontact and nondestructive optical determination of spatial distributions of free-charge-carriers in low-doped semiconductor homo- and heterojunctions addresses fundamental physical properties of device related structures. For low-density free-charge-carriers, particularly for hole densities with their intrinsically lower mobility parameters than electron densities, optical characterization is a challenge. The carrier density plasma frequencies are located at long wavelength equivalents within the terahertz spectral region.
Comments
Published in APPLIED PHYSICS LETTERS 95, 2009. Copyright © 2009 American Institute of Physics. Used by permission.