Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry

Authors

Tino Hofmann, University of Nebraska - LincolnFollow
C. M. Herzinger, J. A. Woollam Co. Inc.
T. E. Tiwald, J. A. Woollam Co. Inc.
John A. Woollam, J. A. Woollam Co. Inc.Follow
Mathias Schubert, University of Nebraska - LincolnFollow

Document Type

Article

Date of this Version

2009

Comments

Published in APPLIED PHYSICS LETTERS 95, 2009. Copyright © 2009 American Institute of Physics. Used by permission.

Abstract

The noncontact and nondestructive optical determination of spatial distributions of free-charge-carriers in low-doped semiconductor homo- and heterojunctions addresses fundamental physical properties of device related structures. For low-density free-charge-carriers, particularly for hole densities with their intrinsically lower mobility parameters than electron densities, optical characterization is a challenge. The carrier density plasma frequencies are located at long wavelength equivalents within the terahertz spectral region.