Date of this Version
Poster Presented at University of Nebraska-Lincoln Research Fair, April 4-5, 2017
The large graphene-metal contact resistance is a major limitation for development of graphene electronics. graphene behaves as an insulator for out-of-plane carrier transport to metallic contacts.
Laser nano-welding was developed and led to RC reductions of up to 84%.
Localized laser irradiation at the edges of graphene led to the formation of chemically active point defects.
Precise structural modifications and formation of G-M bonding led to improved carrier efficiency in graphene devices.