Reducing Graphene-Metal Contact Resistance via Laser Nano-welding

Authors

Kamran Keramatnejad, University of Nebraska-LincolnFollow
H. Rabiee Golgir, University of Nebraska-LincolnFollow
Y. S. Zhou, University of Nebraska-LincolnFollow
D. W. Li, University of Nebraska-LincolnFollow
X. Huang, University of Nebraska-Lincoln
Yongfeng Lu, University of Nebraska - LincolnFollow

ORCID IDs

H. Rabiee Golgir

Date of this Version

4-2017

Document Type

Article

Citation

Poster Presented at University of Nebraska-Lincoln Research Fair, April 4-5, 2017

Comments

Copyright (c) 2017 K. Keramatnejad, H. Rabiee Golgir, Y. S. Zhou, D. W. Li, X. Huang, and Y. F. Lu

Abstract

The large graphene-metal contact resistance is a major limitation for development of graphene electronics. graphene behaves as an insulator for out-of-plane carrier transport to metallic contacts.

Laser nano-welding was developed and led to RC reductions of up to 84%.

Localized laser irradiation at the edges of graphene led to the formation of chemically active point defects.

Precise structural modifications and formation of G-M bonding led to improved carrier efficiency in graphene devices.