Electrical & Computer Engineering, Department of

 

ORCID IDs

H. Rabiee Golgir

Date of this Version

4-2017

Document Type

Article

Citation

Poster Presented at University of Nebraska-Lincoln Research Fair, April 4-5, 2017

Comments

Copyright (c) 2017 K. Keramatnejad, H. Rabiee Golgir, Y. S. Zhou, D. W. Li, X. Huang, and Y. F. Lu

Abstract

The large graphene-metal contact resistance is a major limitation for development of graphene electronics. graphene behaves as an insulator for out-of-plane carrier transport to metallic contacts.

Laser nano-welding was developed and led to RC reductions of up to 84%.

Localized laser irradiation at the edges of graphene led to the formation of chemically active point defects.

Precise structural modifications and formation of G-M bonding led to improved carrier efficiency in graphene devices.

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