Electrical and Computer Engineering, Department of
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
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ORCID IDs
Date of this Version
4-2017
Document Type
Poster
Citation
Poster Presented at University of Nebraska-Lincoln Research Fair, April 4-5, 2017
Abstract
The large graphene-metal contact resistance is a major limitation for development of graphene electronics. graphene behaves as an insulator for out-of-plane carrier transport to metallic contacts.
Laser nano-welding was developed and led to RC reductions of up to 84%.
Localized laser irradiation at the edges of graphene led to the formation of chemically active point defects.
Precise structural modifications and formation of G-M bonding led to improved carrier efficiency in graphene devices.
Comments
Copyright (c) 2017 K. Keramatnejad, H. Rabiee Golgir, Y. S. Zhou, D. W. Li, X. Huang, and Y. F. Lu