REACTION PATHWAY INSIGHTS INTO THE SOLVOTHERMAL PREPARATION OF Culn_{1- x}Ga_xSe₂ NANOCRYSTALLINE MATERIALS

Authors

• Christopher L. Exstrom, University of Nebraska at Kearney
• Scott A. Darveau, University of Nebraska at Kearney
• Andrea L. Martinez-Skinner, University of Nebraska at Kearney
• Matt Ingersoll, University of Nebraska at Kearney
• Jiri Olejnicek, University of Nebraska at Kearney
• Anatole Mirasano, University of Nebraska at Kearney
• Adam T. Haussler, University of Nebraska at Kearney
• James Huguenin-Love, University of Nebraska-Lincoln
• Chad Kamler, University of Nebraska-Lincoln
• Martin Diaz, University of Nebraska-Lincoln
• Natale J. Ianno, University of Nebraska-LincolnFollow
• Rodney J. Soukup, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2008

Comments

33rd IEEE Photovoltaic Specialists Conference, 2008. PVSC '08. Digital Object Identifier: 10.1109/PVSC.2008.4922729 Publication Year: 2008 , Page(s): 1 - 6
Copyright 2008 IEEE. Used by permission.

Abstract

Reaction pathway investigations of the solvothermal preparation of nanocrystalline Culn_{1- x}Ga_xSe₂ in triethylenetetramine reveal the early formation of a previously unreported Cu_2-xSe(S) intermediate. Over 24 hours, this reacts with In and Se species to form CulnSe₂(s). If Ga is present, the reaction proceeds over an additional 48 hours to form Culn_1-xGa_xSe₂. Adding ammonium halide salts reduces the CulnSe₂ formation time to as little as 30 minutes. It is proposed that in these cases, Cu_2-xSe particle growth is limited via a competitive Cu-halide complex formation. The smaller Cu_2-xSe particles may react and form CulnSe₂ more rapidly. A reaction pathway scheme consistent with experimental results and previous literature reports is proposed.