REACTION PATHWAY INSIGHTS INTO THE SOLVOTHERMAL PREPARATION OF Culn_{1- x}Ga_xSe₂ NANOCRYSTALLINE MATERIALS

Authors

Christopher L. Exstrom, University of Nebraska at Kearney
Scott A. Darveau, University of Nebraska at Kearney
Andrea L. Martinez-Skinner, University of Nebraska at Kearney
Matt Ingersoll, University of Nebraska at Kearney
Jiri Olejnicek, University of Nebraska at Kearney
Anatole Mirasano, University of Nebraska at Kearney
Adam T. Haussler, University of Nebraska at Kearney
James Huguenin-Love, University of Nebraska-Lincoln
Chad Kamler, University of Nebraska-Lincoln
Martin Diaz, University of Nebraska-Lincoln
Natale J. Ianno, University of Nebraska-LincolnFollow
Rodney J. Soukup, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2008

Comments

33rd IEEE Photovoltaic Specialists Conference, 2008. PVSC '08. Digital Object Identifier: 10.1109/PVSC.2008.4922729 Publication Year: 2008 , Page(s): 1 - 6
Copyright 2008 IEEE. Used by permission.

Abstract

Reaction pathway investigations of the solvothermal preparation of nanocrystalline Culn_{1- x}Ga_xSe₂ in triethylenetetramine reveal the early formation of a previously unreported Cu_2-xSe(S) intermediate. Over 24 hours, this reacts with In and Se species to form CulnSe₂(s). If Ga is present, the reaction proceeds over an additional 48 hours to form Culn_1-xGa_xSe₂. Adding ammonium halide salts reduces the CulnSe₂ formation time to as little as 30 minutes. It is proposed that in these cases, Cu_2-xSe particle growth is limited via a competitive Cu-halide complex formation. The smaller Cu_2-xSe particles may react and form CulnSe₂ more rapidly. A reaction pathway scheme consistent with experimental results and previous literature reports is proposed.