Generalized model for the optical absorption edge in a-Si:H

Authors

T. Datta, University of Nebraska-Lincoln
John A. Woollam, University of Nebraska-LincolnFollow

Date of this Version

1-1-1989

Comments

Published in Physical Review B 39:3 (January 1989), pp. 1953–1954. Copyright © 1989 The American Physical Society. Used by permission. URL: http://link.aps.org/abstract/PRB/v39/p1953

Abstract

We have reanalyzed the published optical absorption coefficient data for a-Si:H and introduced a divergence temperature, a new concept in the physics of these materials.