Electrical and Computer Engineering, Department of

 

Department of Electrical and Computer Engineering: Faculty Publications

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Document Type

Article

Date of this Version

12-1-1990

Comments

Published in J. Appl. Phys. 68 (11), 1 December 1990. Copyright 1990 American Institute of Physics. Used by permission.

Abstract

Three models for the dielectric function εx (hv) of AgxGa11-xAs are reviewed. All are based on measured optical constants at discrete compositions. The validity of each mode1 near critical pint energies, and otherwise, is evaluated. Only the energy-shift model is appropriate over the entire available spectrum ( 1.5-6.0 eV), including the band-gap (E0) region.

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