Mechanical & Materials Engineering, Department of
Date of this Version
2023
Citation
Published (2023) Diamond and Related Materials, 140, art. no. 110472, Also in arXiv at https://arxiv.org/abs/2301.08712
Abstract
The negatively charged Nitrogen-Vacancy (NV-) center in diamond is one of the most versatile and robust quantum sensors suitable for quantum technologies, including magnetic field and temperature sensors. For precision sensing applications, densely packed NV- centers within a small volume are preferable due to benefiting from 1/√𝑁 sensitivity enhancement (N is the number of sensing NV centers) and efficient excitation of NV centers. However, methods for quickly and efficiently forming high concentrations of NV- centers are in development stage. We report an efficient, low-cost method for creating high-density NV- centers production from a relatively low nitrogen concentration based on high-energy photons from Ar+ plasma. This study was done on type-IIa, single crystal, CVD-grown diamond substrates with an as-grown nitrogen concentration of 1 ppm. We estimate an NV- density of ~ 0.57 ppm (57%) distributed homogeneously over 200 μm deep from the diamond surface facing the plasma source based on optically detected magnetic resonance and fluorescence confocal microscopy measurements. The created NV-s have a spin-lattice relaxation time (T1) of 5 ms and a spin-spin coherence time (T2) of 4 μs. We measure a DC magnetic field sensitivity of ~ 104 nT Hz-1/2, an AC magnetic field sensitivity of ~ 0.12 pT Hz-1/2, and demonstrate real-time magnetic field sensing at a rate over 10 mT s-1 using an active sample volume of 0.2 μm3.
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Mechanics of Materials Commons, Nanoscience and Nanotechnology Commons, Other Engineering Science and Materials Commons, Other Mechanical Engineering Commons
Comments
Used by permission.