Mechanical and Materials Engineering, Department of

 

Department of Mechanical and Materials Engineering: Faculty Publications

Accessibility Remediation

If you are unable to use this item in its current form due to accessibility barriers, you may request remediation through our remediation request form.

Document Type

Article

Date of this Version

2023

Citation

Published (2023) Diamond and Related Materials, 140, art. no. 110472, Also in arXiv at https://arxiv.org/abs/2301.08712

Comments

Used by permission.

Abstract

The negatively charged Nitrogen-Vacancy (NV-) center in diamond is one of the most versatile and robust quantum sensors suitable for quantum technologies, including magnetic field and temperature sensors. For precision sensing applications, densely packed NV- centers within a small volume are preferable due to benefiting from 1/√𝑁 sensitivity enhancement (N is the number of sensing NV centers) and efficient excitation of NV centers. However, methods for quickly and efficiently forming high concentrations of NV- centers are in development stage. We report an efficient, low-cost method for creating high-density NV- centers production from a relatively low nitrogen concentration based on high-energy photons from Ar+ plasma. This study was done on type-IIa, single crystal, CVD-grown diamond substrates with an as-grown nitrogen concentration of 1 ppm. We estimate an NV- density of ~ 0.57 ppm (57%) distributed homogeneously over 200 μm deep from the diamond surface facing the plasma source based on optically detected magnetic resonance and fluorescence confocal microscopy measurements. The created NV-s have a spin-lattice relaxation time (T1) of 5 ms and a spin-spin coherence time (T2) of 4 μs. We measure a DC magnetic field sensitivity of ~ 104 nT Hz-1/2, an AC magnetic field sensitivity of ~ 0.12 pT Hz-1/2, and demonstrate real-time magnetic field sensing at a rate over 10 mT s-1 using an active sample volume of 0.2 μm3.

Share

COinS