DigitalCommons@University of Nebraska - Lincoln - L. Bernard, J. Monson, A. Sokolov, Zong-Yuan Liu, C.S. Yang, Peter A. Dowben, B. Doudin, A. Harken, P. Welsch, and B.W. Robertson: Magnetoresistance in boron carbide junctions

Research Papers in Physics and Astronomy

Peter Dowben Publications

Title

Magnetoresistance in boron carbide junctions

Authors

L. Bernard, University of Nebraska-Lincoln
J. Monson, University of Nebraska-Lincoln
A. Sokolov, University of Nebraska-Lincoln
Zong-Yuan Liu, University of Nebraska-Lincoln
C.S. Yang, University of Nebraska-Lincoln
Peter A. Dowben, University of Nebraska-Lincoln
B. Doudin, University of Nebraska-Lincoln
A. Harken, University of Nebraska-Lincoln
P. Welsch, University of Nebraska-Lincoln
B.W. Robertson, University of Nebraska-Lincoln

Document Type

Article

Date of this Version

November 2003

Comments

Published Appl. Phys. Lett. 83 (2003) 3743-3745. Permission to use.

Abstract

Photoemission and electric transport properties of ferromagnet–insulator–ferromagnet junctions with boron carbide (C₂B₁₀) dielectric barrier are presented. Using a non-oxide barrier confidence avoids oxidation of the interfaces with the ferromagnetic layers. Photoemission confirms chemical abruptness of the interface. Magnetoresistance ratios reaching 50% are observed at low temperatures, and large nonlinearity in the current–voltage curves show that impurities in the junctions play a key role. © 2003 American Institute of Physics.

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