Date of this Version
Photoemission and electric transport properties of ferromagnet–insulator–ferromagnet junctions with boron carbide (C2B10) dielectric barrier are presented. Using a non-oxide barrier confidence avoids oxidation of the interfaces with the ferromagnetic layers. Photoemission confirms chemical abruptness of the interface. Magnetoresistance ratios reaching 50% are observed at low temperatures, and large nonlinearity in the current–voltage curves show that impurities in the junctions play a key role. © 2003 American Institute of Physics.