Research Papers in Physics and Astronomy

 

Date of this Version

11-3-2003

Comments

Published Appl. Phys. Lett. 83 (2003) 3743-3745. Permission to use.

Abstract

Photoemission and electric transport properties of ferromagnet–insulator–ferromagnet junctions with boron carbide (C2B10) dielectric barrier are presented. Using a non-oxide barrier confidence avoids oxidation of the interfaces with the ferromagnetic layers. Photoemission confirms chemical abruptness of the interface. Magnetoresistance ratios reaching 50% are observed at low temperatures, and large nonlinearity in the current–voltage curves show that impurities in the junctions play a key role. © 2003 American Institute of Physics.

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