Magnetoresistance in boron carbide junctions

Authors

L. Bernard, University of Nebraska-Lincoln
J. Monson, University of Nebraska-Lincoln
Andrei Sokolov, University of Nebraska-LincolnFollow
Zong-Yuan Liu, University of Nebraska-Lincoln
C.S. Yang, University of Nebraska-Lincoln
Peter A. Dowben, University of Nebraska-LincolnFollow
Bermard Doudin, University of Nebraska-LincolnFollow
A. Harken, University of Nebraska-Lincoln
P. Welsch, University of Nebraska-Lincoln
B. W. Robertson, University of Nebraska-LincolnFollow

Date of this Version

11-3-2003

Comments

Published Appl. Phys. Lett. 83 (2003) 3743-3745. Permission to use.

Abstract

Photoemission and electric transport properties of ferromagnet–insulator–ferromagnet junctions with boron carbide (C₂B₁₀) dielectric barrier are presented. Using a non-oxide barrier confidence avoids oxidation of the interfaces with the ferromagnetic layers. Photoemission confirms chemical abruptness of the interface. Magnetoresistance ratios reaching 50% are observed at low temperatures, and large nonlinearity in the current–voltage curves show that impurities in the junctions play a key role. © 2003 American Institute of Physics.