Development of the Gd(0001) band structure with film thickness

Authors

• Dongqi Li, Syracuse University
• W. Hutchings, Syracuse University
• Peter A. Dowben, University of Nebraska-LincolnFollow
• Rong-Tzong Wu, University of Wisconsin, Madison
• C. Hwang, University of Wisconsin, Madison
• M. Onellion, University of Wisconsin, Madison
• A.B. Andrews, University of Texas, Austin
• J.L. Erskine, University of Texas, Austin

Document Type

Article

Date of this Version

November 1991

Comments

Published by American Institute of Physics; Appl. Phys. 70 (1991) 6565–6567. Copyright 1991. Permission to use.

Abstract

By growing gadolinium films on W(110), it has been possible to observe the development of the Gd(0001) band structure with increasing film thickness. The changes in the 5d bands as a result of exposure to oxygen or the development of the valence-band structure with increasing film thickness lead to changes in the 5p multiplet oscillator strengths. These changes are a result of the influence of the band structure upon the final-state effects that give rise to such multiplet structures. This study provides conclusive evidence that there is a 5d contribution to the shallow 5p multiplet photoemission core-level structure.