Research Papers in Physics and Astronomy

 

Date of this Version

3-20-2003

Comments

Published in Thin Solid Films 428:1–2 (March 20, 2003), pp. 253-256; in Proceedings of Symposium J on Growth and Evolution of Ultrathin Films: Surface and Interface Geometric and Electronic Structure, of the E-MRS Spring Conference. doi:10.1016/S0040-6090(02)01283-X Copyright © 2002 Elsevier Science B.V. Used by permission.

Abstract

The adsorption of closo-1,2 dicarbadodecaborane (orthocarborane) on evaporated cobalt thin films has been investigated by combined photoemission and inverse photoemission studies. The adsorption of these icosahedral molecules does not strongly perturb the electronic structure of the underlying cobalt. As was previously observed with adsorption on Cu(100), electron induced decomposition of adsorbed orthocarborane decreases the HOMO–LUMO gap. The X-ray photoemission spectra before and after orthocarborane adsorption confirm that the interface with cobalt is abrupt. These results suggest that chemical vapor deposition, via the decomposition of orthocarborane, may be an effective method for fabricating dielectric barrier layers, without utilizing oxides. This is of interest for spin electronics applications.

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