Research Papers in Physics and Astronomy
Date of this Version
September 2007
Abstract
Gd-doped HfO2 films deposited on silicon substrates undergo a crystallographic change from monoclinic to fluorite (cubic) phase with increasing Gd concentrations. The crystallographic phase change is accompanied by a small increase in the valence bandwidth and in the apparent band offset in the surface region. Electrical measurements show pronounced rectification properties for lightly doped Gd:HfO2 films on p-Si and for heavily-doped Gd:HfO2 films on n-Si, suggesting a crossover from n-type to p -type behavior with increasing doping level.
Comments
Published by Am Inst of Physics. J. Appl. Phys. 91, 132908 2007. Copyright 2007. Permission to use. http://www.aip.org/.