The electronic structure change with Gd doping of HfO₂ on silicon

Authors

Yaroslav B. Losovyj, Louisiana State University at Baton RougeFollow
Ihor Ketsman, University of Nebraska-LincolnFollow
Andrei Sokolov, University of Nebraska-LincolnFollow
Kirill D. Belashchenko, University of Nebraska-LincolnFollow
Peter A. Dowben, University of Nebraska-LincolnFollow
Jinke Tang, University of WyomingFollow
Zhenjun Wang, University of Wyoming, Laramie, Wyoming

Date of this Version

9-26-2007

Comments

Published by Am Inst of Physics. J. Appl. Phys. 91, 132908 2007. Copyright 2007. Permission to use. http://www.aip.org/.

Abstract

Gd-doped HfO₂ films deposited on silicon substrates undergo a crystallographic change from monoclinic to fluorite (cubic) phase with increasing Gd concentrations. The crystallographic phase change is accompanied by a small increase in the valence bandwidth and in the apparent band offset in the surface region. Electrical measurements show pronounced rectification properties for lightly doped Gd:HfO₂ films on p-Si and for heavily-doped Gd:HfO₂ films on n-Si, suggesting a crossover from n-type to p -type behavior with increasing doping level.