The bulk band structure and inner potential of layered In₄Se₃

Authors

• Jing Liu, University of Nebraska-Lincoln
• Yaroslav B. Losovyj, University of Nebraska-LincolnFollow
• Takashi Komesu, University of Nebraska-LincolnFollow
• Peter A. Dowben, University of Nebraska-LincolnFollow
• L. Makinistian, Universidad Nacional de Entre Ríos, 3101 Oro Verde (ER), Argentina
• E. A. Albinesi, Universidad Nacional de Entre Ríos, 3101 Oro Verde (ER), Argentina
• A. G. Petukhov, South Dakota School of Mines
• P. Galiy, Electronics Department, Lviv National University, 50 Dragomanov Street, 79005 Lviv, Ukraine
• Ya. Fiyala, Electronics Department, Lviv National University, 50 Dragomanov Street, 79005 Lviv, Ukraine

Document Type

Article

Date of this Version

1-19-2008

Comments

Published in Applied Surface Science (2008); doi:10.1016/j.apsusc.2008.01.061 Copyright © 2008 Elsevier B.V. Used by permission. http://www.sciencedirect.com/science/journal/01694332

Abstract

The layered In₄Se₃ system does have a bulk band structure (i.e. discernible and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure.