DigitalCommons@University of Nebraska - Lincoln - Jing Liu, Ya. B. Losovyj, Takashi Komesu, Peter Dowben, L. Makinistian, E. A. Albinesi, A. G. Petukhov, P. Galiy, and Ya. Fiyala: The bulk band structure and inner potential of layered In<sub>4</sub>Se<sub>3</sub>

Research Papers in Physics and Astronomy

Peter Dowben Publications

Title

The bulk band structure and inner potential of layered In₄Se₃

Authors

Jing Liu, University of Nebraska - Lincoln
Ya. B. Losovyj, University of Nebraska - Lincoln
Takashi Komesu, University of Nebraska - Lincoln
Peter Dowben, University of Nebraska - Lincoln
L. Makinistian, Universidad Nacional de Entre Ríos, 3101 Oro Verde (ER), Argentina
E. A. Albinesi, Universidad Nacional de Entre Ríos, 3101 Oro Verde (ER), Argentina
A. G. Petukhov, South Dakota School of Mines, Department of Physics, Rapid City, SD 57701-3995, USA
P. Galiy, Electronics Department, Lviv National University, 50 Dragomanov Street, 79005 Lviv, Ukraine
Ya. Fiyala, Electronics Department, Lviv National University, 50 Dragomanov Street, 79005 Lviv, Ukraine

Document Type

Article

Date of this Version

January 2008

Comments

Abstract

The layered In₄Se₃ system does have a bulk band structure (i.e. discernible and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure.

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