The bulk band structure and inner potential of layered In₄Se₃

Authors

Jing Liu, University of Nebraska-Lincoln
Yaroslav B. Losovyj, University of Nebraska-LincolnFollow
Takashi Komesu, University of Nebraska-LincolnFollow
Peter A. Dowben, University of Nebraska-LincolnFollow
L. Makinistian, Universidad Nacional de Entre Ríos, 3101 Oro Verde (ER), Argentina
E. A. Albinesi, Universidad Nacional de Entre Ríos, 3101 Oro Verde (ER), Argentina
A. G. Petukhov, South Dakota School of Mines
P. Galiy, Electronics Department, Lviv National University, 50 Dragomanov Street, 79005 Lviv, Ukraine
Ya. Fiyala, Electronics Department, Lviv National University, 50 Dragomanov Street, 79005 Lviv, Ukraine

Date of this Version

1-19-2008

Comments

Published in Applied Surface Science (2008); doi:10.1016/j.apsusc.2008.01.061 Copyright © 2008 Elsevier B.V. Used by permission. http://www.sciencedirect.com/science/journal/01694332

Abstract

The layered In₄Se₃ system does have a bulk band structure (i.e. discernible and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure.