Voltage controlled Néel vector rotation in zero magnetic field

Authors

Ather Mahmood, University of Nebraska–LincolnFollow
Will Echtenkamp, University of Nebraska–Lincoln
Mike Street, University of Nebraska–Lincoln
Jun Lei Wang, University of Nebraska–Lincoln
Shi Cao, University of Nebraska–Lincoln
Takashi Komesu, University of Nebraska - LincolnFollow
Peter Dowben, University of Nebraska - LincolnFollow
Pratyush Buragohain, University of Nebraska–LincolnFollow
Haidong Lu, University of Nebraska-LincolnFollow
Alexei GruvermanFollow
Arun Parthasarathy, New York University
Shaloo Rakheja, University of Illinois Urbana-Champaign
Christian Binek, University of Nebraska, LincolnFollow

ORCID IDs

Ather Mahmood http://orcid.org/0000-0001-7170-1646

Shi Cao http://orcid.org/0000-0001-9380-2683

Peter A. Dowben http://orcid.org/0000-0002-2198-4710

Pratyush Buragohain http://orcid.org/0000-0001-6744-3082

Haidong Lu http://orcid.org/0000-0003-0580-0229

Alexei Gruverman http://orcid.org/0000-0003-0492-2750

Arun Parthasarathy http://orcid.org/0000-0001-7340-8494

Christian Binek http://orcid.org/0000-0002-0026-0772

Date of this Version

12-1-2021

Citation

NATURE COMMUNICATIONS (2021) 12:1674

https://doi.org/10.1038/s41467-021-21872-3

Comments

This article is licensed under a Creative Commons Attribution 4.0 International License

Abstract

Multi-functional thin films of boron (B) doped Cr₂O₃ exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr₂O₃ film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport and scanning probe microscopy measurements reveal B-dependent TN and resistivity enhancement, spin-canting, anisotropy reduction, dynamic polarization hysteresis and gate voltage dependent orientation of boundary magnetization. The combined effect enables H = 0, voltage controlled, nonvolatile Néel vector rotation at high-temperature. Theoretical modeling estimates switching speeds of about 100 ps making B:Cr₂O₃ a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications.