Research Papers in Physics and Astronomy

 

Date of this Version

December 1993

Comments

Published by American Institute of Physics; J. Appl. Phys. 74 (1993) 6919–6924. Copyright 1993. Permission to use.

Abstract

Boron carbide thin films of several B/C ratios have been deposited on Si(111) using plasma-enhanced chemical vapor deposition from nido-pentaborane(9) (B5H9) and methane (CH4). X-ray diffraction studies of boron carbide thin films on Si(111) exhibited characteristic microcrystalline diffraction lines. Soft x-ray emission spectroscopy was used to verify that the local electronic structure and composition of each sample corresponded to a homogeneous solid solution boron carbide phase.

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