The structural homogeneity of boron carbide thin films fabricated using plasma-enhanced chemical vapor deposition from B₅H_9⁺CH₄

Authors

Sunwoo Lee, Syracuse UniversityFollow
J. Mazurowski, Syracuse University
W.L. O'Brien, University of Tennessee, Knoxville
Q.Y. Dong, University of Tennessee, Knoxville
J.J. Jia, University of Tennessee, Knoxville
T.A. Callcott, University of Tennessee, Knoxville
K.E. Miyano, Tulane University, New Orleans, Louisiana
D.L. Ederer, Tulane University, New Orleans, Louisiana
D.R. Mueller, National Institute of Standards & Technology, Gaithersburg, Maryland
Peter A. Dowben, University of Nebraska-LincolnFollow

Date of this Version

December 1993

Comments

Published by American Institute of Physics; J. Appl. Phys. 74 (1993) 6919–6924. Copyright 1993. Permission to use.

Abstract

Boron carbide thin films of several B/C ratios have been deposited on Si(111) using plasma-enhanced chemical vapor deposition from nido-pentaborane(9) (B₅H₉) and methane (CH₄). X-ray diffraction studies of boron carbide thin films on Si(111) exhibited characteristic microcrystalline diffraction lines. Soft x-ray emission spectroscopy was used to verify that the local electronic structure and composition of each sample corresponded to a homogeneous solid solution boron carbide phase.