The structural homogeneity of boron carbide thin films fabricated using plasma-enhanced chemical vapor deposition from B₅H_9⁺CH₄

Authors

• Sunwoo Lee, Syracuse UniversityFollow
• J. Mazurowski, Syracuse University
• W.L. O'Brien, University of Tennessee, Knoxville
• Q.Y. Dong, University of Tennessee, Knoxville
• J.J. Jia, University of Tennessee, Knoxville
• T.A. Callcott, University of Tennessee, Knoxville
• K.E. Miyano, Tulane University, New Orleans, Louisiana
• D.L. Ederer, Tulane University, New Orleans, Louisiana
• D.R. Mueller, National Institute of Standards & Technology, Gaithersburg, Maryland
• Peter A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

December 1993

Comments

Published by American Institute of Physics; J. Appl. Phys. 74 (1993) 6919–6924. Copyright 1993. Permission to use.

Abstract

Boron carbide thin films of several B/C ratios have been deposited on Si(111) using plasma-enhanced chemical vapor deposition from nido-pentaborane(9) (B₅H₉) and methane (CH₄). X-ray diffraction studies of boron carbide thin films on Si(111) exhibited characteristic microcrystalline diffraction lines. Soft x-ray emission spectroscopy was used to verify that the local electronic structure and composition of each sample corresponded to a homogeneous solid solution boron carbide phase.