Department of Physics and Astronomy: Publications and Other Research
Date of this Version
1-2000
Abstract
We show that quantum-well states enhance the current-perpendicular-to-planes resistivity of a metal film compared to the resistivity in the bulk at film thicknesses comparable with the mean free path due to the reduced number of conducting channels within the potential-well structure. This makes the mean free path an important parameter, which must be taken into account for the accurate treatment of results on currentperpendicular- to-plane giant magnetoresistance, rather than ignored by applying the two-current series-resistor model.
Comments
Published in Physical Review B 61, 506-510 (2000). Copyright © 2000 The American Physical Society. Used by permission.