Quantum-Well Resistivity for Perpendicular Transport in Magnetic Layered Systems

Authors

Evgeny Y. Tsymbal, University of Nebraska at LincolnFollow
David G. Pettifor, University of OxfordFollow

Document Type

Article

Date of this Version

1-2000

Comments

Published in Physical Review B 61, 506-510 (2000). Copyright © 2000 The American Physical Society. Used by permission.

Abstract

We show that quantum-well states enhance the current-perpendicular-to-planes resistivity of a metal film compared to the resistivity in the bulk at film thicknesses comparable with the mean free path due to the reduced number of conducting channels within the potential-well structure. This makes the mean free path an important parameter, which must be taken into account for the accurate treatment of results on currentperpendicular- to-plane giant magnetoresistance, rather than ignored by applying the two-current series-resistor model.