Libraries at University of Nebraska-Lincoln
Document Type
Thesis
Date of this Version
1-1969
Citation
Thesis (M.S.)—University of Nebraska—Lincoln, 1969. Department of Electrical Engineering.
Abstract
Quenched in defects decrease the conductivity of thin gold films deposited on bismuth oxide and also affect the optical properties of the gold. Isothermal and isochronal annealing studies on these films have shown that there is a definite correlation between dc resistance and the ellipsometer parameters Delta and Psi.
Isothermal and isochronal annealing studies in the temperature range of 23-140 C indicate that monovacancy migration occurs in the temperature range of 75-130 C.The activation energy calculated from resistance anneals yields a value of 0.79 eV which is in good agreement with literature data.
The results emphasize the fact that the optical properties of thin films may be changed by the annealing of defects, and that ellipsometry may be of considerable value in the study of the annealing of thin films and may reveal a change in the system which is not observable by other methods.
Advisor: N. M. Bashara and K. Krishna Rao
Comments
Copyright 1969, the author. Used by permission.