Simulation of the growth of CVD films

Authors

Jacob J. Thiart, Department of Chemical Engineering, Suny at Buffalo, Amhearst , 14260
Vladimir Hlavacek, Department of Chemical Engineering, State university of New York, Buffalo. NY
Hendrik J. Viljoen, University of Nebraska-LincolnFollow

Date of this Version

5-1-1995

Comments

This article was published in Chemical Engineering Science, Vol. 50. No. 21, pp. 3493-3497, 1995 Copyright 1995 Elsevier Science Ltd. This is authors version. Please visit Publisher Elsevier's site for the published version. All the material is copyrigheted by Elsevier and any form of reproducing without the written permission of the publisher is prohibited.

Abstract

Chemical vapor deposition (CVD) is the preferred method of manufacture for solid films used in many industrially important thin and thick film applications. Requirements for the physical, mechanical and electrical properties of these films are becoming increasingly difficult to achieve, and deposition morphology plays an important role in this regard. Recently, we proposed a continuum model describing the evolution of a gassolid interface during atmospheric pressure CVD (Viljoen er al., 1994). A linear stability analysis (LSA) was used to determine the effect of reactor conditions on planar growth stability. The present paper discusses numerical solution of this model, and uses simulation examples to illustrate interface evolution under typical deposition conditions and from arbitrary initial interface shapes.