Chemical and Biomolecular Engineering, Department of
Department of Chemical and Biomolecular Engineering: Patents
Date of this Version
4-15-2003
Abstract
A memory device including at least one pair of spaced apart conductors and a ferroelectric material between the pair of conductors. The pair of conductors is spaced apart a distance sufficient to permit a tunneling current there between.
Comments
The Inventors of this patent are Hemantha K. Wickramasinghe, Chappaqua, NY (US); Ravi F. Saraf, Briar Cliff Manor, NY (US) The relevant information about this patent can be obtained from the website. HREF"http://patft1.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=8&f=G&l=50&co1=AND&d=PTXT&s1=Ravi.INNM.&s2=Saraf.INNM.&OS=IN/Ravi+AND+IN/Saraf&RS=IN/Ravi+AND+IN/Saraf.html">United States Patent No.6,548,843 B2