Chemical and Biomolecular Engineering, Department of: Papers in Subdisciplines
Papers in Reaction Kinetics
Accessibility Remediation
If you are unable to use this item in its current form due to accessibility barriers, you may request remediation through our remediation request form.
Date of this Version
5-2-2000
Citation
United States patent no. 6,057,628; May 2, 2000
Abstract
Disclosed is a piezoelectric system which demonstrates piezoelectric properties over a large temperature range of from room temperature to approximately 1,360 degrees Centigrade. The piezoelectric system sequentially comprises a first electrically conductive layer, a layer of Ta2O5) in other than a monoclinic phase, (preferably orthorhombic demonstrating small X-ray crystallographic < 0 0 1> and < 1 11 0> peaks), and a second electrically conductive layer. A preferred method of fabrication involves sputter deposition of both said layer of Ta2O5 and said second electrically conductive layer.
Comments
United States government work