Few-layer titanium trisulfide (TiS₃) field-effect transistors

Authors

Alexey Lipatov, University of Nebraska-LincolnFollow
Peter M. Wilson, University of Nebraska – LincolnFollow
Mikhail Shekhirev, University of Nebraska – Lincoln
Jacob D. Teeter, University of Nebraska – Lincoln
Ross Netusil, University of Nebraska – Lincoln
Alexander Sinitskii, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2015

Citation

Nanoscale, 2015, 00, 1-3

Comments

© The Royal Society of Chemistry 2015

Abstract

Titanium trisulfide (TiS₃) is a promising layered semiconductor material. Several-mm-long TiS₃ whiskers can be conveniently grown by the direct reaction of titanium and sulfur. In this study, we exfoliated these whiskers using the adhesive tape approach and fabricated few-layer TiS₃ field-effect transistors (FETs). The TiS₃ FETs showed an n-type electronic transport with roomtemperature field-effect mobilities of 18-24 cm²V^-1s^-1 and ON/OFF ratios up to 300. We demonstrate that TiS₃ is compatible with the conventional atomic layer deposition (ALD) procedure for Al₂O₃. ALD of alumina on TiS3 FETs resulted in mobility increase up to 43 cm²V^-1s^-1, ON/OFF ratios up to 7000, and much improved subthreshold swing characteristics. This study shows that TiS₃ is a competitive electronic material in the family of two-dimensional (2D) transition metal chalcogenides and can be considered for emerging device applications.