Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures

Authors

V. M. Voora, University of Nebraska-Lincoln
Tino Hofmann, University of Nebraska - LincolnFollow
M. Brandt, Universität Leipzig
M. Lorenz, Universität Leipzig
M. Grundmann, Universität Leipzig
N. Ashkenov, Universität Leipzig
Mathias Schubert, University of Nebraska - LincolnFollow

Date of this Version

2009

Comments

Published in APPLIED PHYSICS LETTERS 94, 2009. Copyright © 2009 American Institute of Physics. Used by permission.

Abstract

We report on temperature, time, and voltage dependent resistive hysteresis measurements of BaTiO₃-ZnO heterostructures grown on (001) Si substrates by pulsed laser deposition. We observe a diodelike behavior and cycling-voltage dependent hysteresis formation under forward bias. We explain these effects with depletion layer formation between the ZnO and BaTiO₃ layers, an additional barrier due to the spontaneous polarization of ZnO and the ferroelectric nature of BaTiO₃. The disappearance of the resistive hysteresis above the ferroelectric-paraelectric phase transition temperature of BaTiO₃ conformed that the hysteresis is related to the ferroelectricity of BaTiO₃. Time dependent resistance measurements reveal memory effects.