TEM study of crystalline structures of Cr–N thin films

Authors

Xingzhong Li, University of Nebraska - LincolnFollow
J. Zhang, University of Nebraska - Lincoln
David J. Sellmyer, University of Nebraska-LincolnFollow

Date of this Version

2004

Citation

J. Appl. Cryst. (2004). 37, 1010–1012

doi:10.1107/S0021889804022642

Comments

Copyright 2004 International Union of Crystallography. Used by permission.

Abstract

Cr–N films were grown on Si (001) substrates by reactive magnetron sputtering under an N2/Ar atmosphere at room temperature. The composition of the films, expressed as Cr_1–xN_x, can be varied by changing the N₂/Ar pressure ratio during the synthesis process. Crystalline states of Cr–N films have been studied using electron diffraction. It is well known that two intermediate phases, Cr₂N (hexagonal) and CrN (cubic), exist in the Cr–N system, and small variations around the ideal stoichiometry are tolerated. The present study shows that cubic CrN with vacancies rather than hexagonal Cr₂N may exist in a Cr–N film with a thickness of about 50 nm produced under a low N₂ partial pressure.