Date of this Version
J. Appl. Cryst. (2004). 37, 1010–1012
Cr–N films were grown on Si (001) substrates by reactive magnetron sputtering under an N2/Ar atmosphere at room temperature. The composition of the films, expressed as Cr1–xNx, can be varied by changing the N2/Ar pressure ratio during the synthesis process. Crystalline states of Cr–N films have been studied using electron diffraction. It is well known that two intermediate phases, Cr2N (hexagonal) and CrN (cubic), exist in the Cr–N system, and small variations around the ideal stoichiometry are tolerated. The present study shows that cubic CrN with vacancies rather than hexagonal Cr2N may exist in a Cr–N film with a thickness of about 50 nm produced under a low N2 partial pressure.