Boron carbide/n-silicon carbide heterojunction diodes

Authors

Shireen Adenwalla, University of Nebraska-LincolnFollow
P. Welsch, University of Nebraska - Lincoln
A. Harken, University of Nebraska - Lincoln
Jennifer I. Brand, University of Nebraska-LincolnFollow
A. Sezer, University of Nebraska - Lincoln
Brian W. Robertson, University of Nebraska - LincolnFollow

Date of this Version

12-24-2001

Comments

Published in APPLIED PHYSICS LETTERS VOLUME 79, NUMBER 26. © 2001 American Institute of Physics. Used by permission.

Abstract

The fabrication, initial structural characterization, and diode measurements are reported for a boron carbide/silicon carbide heterojunction diode. Current–voltage curves are obtained for operation at temperatures from 24 to 351 °C. Plasma-enhanced chemical-vapor deposition (PECVD) -deposited undoped boron carbide material is highly crystalline and consists of a variety of polytypes of boron carbide (BC) with crystal sizes as large as 110 nm. Crystal phases are similar to those for PECVD BC on Si but only partially match known boron and boron-rich BC phases.