Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

Authors

• George G. Peterson, University of Nebraska-LincolnFollow
• Yongqiang Wang, University of Nebraska-Lincoln
• Natale J. Ianno, University of Nebraska-LincolnFollow
• Michael Nastasi, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2016

Citation

Published in IEEE Transactions on Nuclear Science (early access, November 9, 2016)

Comments

Copyright 2016 The Authors.

Abstract

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B₁₀C_2+x:H_y) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (��) that incorporates changes of the electrical properties for both the a-B₁₀C_2+x:H_y film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (��). Samples were then irradiated with 200 keV He⁺ ions, and the conductance model was matched to the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B₁₀C_2+x:H_y and irradiated silicon. Additionally, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.