Surface Flashover of Silicon

Authors

Frank E. Peterkin, University of Nebraska - Lincoln
Tim Ridolfi, University of Nebraska - Lincoln
Lonnie L. Buresh, University of Nebraska - Lincoln
Brian J. Hankla, University of Nebraska - Lincoln
D. K. Scott, University of Nebraska - Lincoln
P. F. Williams, University of Nebraska - LincolnFollow
William C. Nunnally, IEEE
B. L. Thomas, IEEE

Date of this Version

December 1990

Comments

Published in IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL 77. NO 12. DECEMBER 1990. Copyright © 1990 IEEE. Used by permission.

Abstract

The development of high-voltage semiconductor devices has been hampered by the occurrence of flashover at the surface of the semiconductor. The physical mechanisms responsible for this phenomenon are not understood. We present new empirical information which clarifies the processes responsible for surface flashover in a vacuum ambient by showing clearly that in flashover current flows primarily inside the semiconductor surface rather than in the ambient. This observation is in fundamental disagreement with the standard model for vacuum flashover of insulator surfaces.