Electrical & Computer Engineering, Department of
Date of this Version
October 1970
Abstract
High-frequency localized vibrational modes of impurities in a III-V compound have been observed by Raman scattering. Three lines from the GaP samples closely correspond to some loccal modes previously reported in infrared studies, and depolarization measurements tend to confirm their proposed assignments. We describe several attractive features of this method for the study of semiconductor impurities.
Comments
Published in Physical Review Letters Volume 25, Number 17, 26 October 1970. Copyright © 1970 American Physical Society. Used by permission.