Modeling, Simulation, and Validation of a Power SiC BJT

Authors

Tanya Kirilova Gachovska, University of NebraskaFollow
Jerry L. Hudgins, University of Nebraska-LincolnFollow
Angus Bryant, Converteam U.K. LtdFollow
Enrico Santi, University of South Carolina - ColumbiaFollow
Alan Mantooth, University of ArkansasFollow
Anant K. Agarwal, Cree Inc.Follow

Document Type

Article

Date of this Version

2012

Citation

IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 27, NO. 10, OCTOBER 2012; Digital Object Identifier 10.1109/TPEL.2012.2190622

Comments

Copyright 2012 IEEE

Abstract

This paper presents a physics-based model of a silicon carbide bipolar junction transistor and verification of its validity through experimental testing. The Fourier series solution is used to solve the ambipolar diffusion equation in the transistor collector region. The model is realized using MATLAB and Simulink. The experimental results of static operation and also the simulated and experimental results of switching waveforms are given.