Giant photoresistivity and optically controlled switching in self-assembled nanowires

Authors

• N. Kouklin, University of Nebraska-Lincoln
• L. Menon, University of Nebraska-Lincoln
• A. Z. Wong, University of Nebraska-Lincoln
• Daniel W. Thompson, University of Nebraska-LincolnFollow
• John A. Woollam, University of Nebraska-LincolnFollow
• P. F. Williams, University of Nebraska-Lincoln
• Supriyo Bandyopadhyay, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

12-24-2001

Comments

Published in Appl. Phys. Lett., Vol. 79, No. 26, 24 December 2001. © 2001 American Institute of Physics. Used by permission.

Abstract

We report the observation of giant photoresistivity in electrochemically self-assembled CdS and ZnSe nanowires electrodeposited in a porous alumina film. The resistance of these nanowires increases by one to two orders of magnitude when exposed to infrared radiation, possibly because of real-space transfer of electrons from the nanowires into the surrounding alumina by photon absorption. This phenomenon has potential applications in ‘‘normally on’’ infrared photodetectors and optically controlled switches.