Electrical & Computer Engineering, Department of


Date of this Version



Published in Appl. Phys. Lett., Vol. 79, No. 26, 24 December 2001. © 2001 American Institute of Physics. Used by permission.


We report the observation of giant photoresistivity in electrochemically self-assembled CdS and ZnSe nanowires electrodeposited in a porous alumina film. The resistance of these nanowires increases by one to two orders of magnitude when exposed to infrared radiation, possibly because of real-space transfer of electrons from the nanowires into the surrounding alumina by photon absorption. This phenomenon has potential applications in ‘‘normally on’’ infrared photodetectors and optically controlled switches.