Mechanical, geometrical, and electrical characterization of silicon membranes for open stencil masks

Authors

E. Sossna, Institute of Technological Physics, IMA, University of Kassel, Heinrich-Plett-Strasse 40, 34132-Kassel, Germany
A. Degen, University of Kassel
I. W. Rangelow, University of Kassel
M. Drzik, Slovak Academy of Sciences, Dubravska 9, 842 20 Bratislava, Slovak Republic
P. Hudek, Slovak Academy of Sciences, Dubravska 9, 842 20 Bratislava, Slovak Republic
T. E. Tiwald, J. A. Woollam Company
John A. Woollam, J. A. Woollam CompanyFollow

Document Type

Article

Date of this Version

11-1-2001

Comments

Published in J. Vac. Sci. Technol. B 19„(6), Nov-Dec 2001. ©2001 American Vacuum Society. Used by permission.

Abstract

Silicon membranes are used for stencil masks which are key to charged particle projection lithography, particularly for ion projection lithography, electron beam projection. Quantitative and qualitative determination of the mechanical properties of the true thickness, thickness variations (morphology), electrical conductivity and stress is critical to the development of next generation lithography. The metrology setup includes high accuracy thickness, refractive index and electrical conductivity measurement based on infrared variable angle spectroscopic ellipsometry, thickness variation characterization based on the Fizeau interferometric scheme and mechanical stress evaluation based on a novel double bulging technique.