Electron effective mass in Sn-doped monoclinic single crystal b-gallium oxide determined by mid-infrared optical Hall effect

Authors

Sean Knight, University of Nebraska-LincolnFollow
Alyssa Mock, University of Nebraska - LincolnFollow
Rafal Korlacki, University of Nebraska-LincolnFollow
Vanya Darakchieva, Linköping University, SwedenFollow
Bo Monemar, Linkoping University & Tokyo University of Agriculture and Technology
Yoshinao Kumagai, Tokyo University of Agriculture and Technology
Ken Goto, Tokyo University of Agriculture and Technology & Tamura Corporation
Masataka Higashiwaki, National Institute of Information and Communications Technology
Mathias Schubert, University of Nebraska-Lincoln & Linkoping University & Leibniz Institute for Polymer Research,Follow

Document Type

Article

Date of this Version

1-3-2018

Citation

012103-2 Knight et al. Appl. Phys. Lett. 112, 012103 (2018) Pages 1-5

Comments

Copyright APPLIED PHYSICS LETTERS 112, 012103 (2018)

Abstract

The isotropic average conduction band minimum electron effective mass in Sn-doped monoclinic single crystal B-Ga₂O₃ is experimentally determined by the mid-infrared optical Hall effect to be (0.28460.013)m₀ combining investigations on (010) and (_201) surface cuts. This result falls within the broad range of values predicted by theoretical calculations for undoped B-Ga₂O₃. The result is also comparable to recent density functional calculations using the Gaussian-attenuation- Perdew-Burke-Ernzerhof hybrid density functional, which predict an average effective mass of 0.267m₀. Within our uncertainty limits, we detect no anisotropy for the electron effective mass, which is consistent with most previous theoretical calculations. We discuss upper limits for possible anisotropy of the electron effective mass parameter from our experimental uncertainty limits, and we compare our findings with recent theoretical results.