Monitoring Aging of Power Semiconductor Devices Based on Case Temperature

Authors

Wei Qiao, University of Nebraska-LincolnFollow
Ze Wang, Kokomo, IN
Liyan Qu, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2019

Citation

Patent No.: US 10,288,672 B2

Comments

Appl. No.: 15/482,276

Abstract

The aging of an electronic component in an electronic power converter can be monitored based on two or more case temperature measurements. A power electronic device is enclosed in a package having a baseplate, in which the power electronic device generates heat during operation and the baseplate transfers heat to a heat dissipating device or a cooling device. Sensors measure temperatures at first and second locations on a surface of the baseplate. A data processor calculates a value for a first parameter based on the temperatures at the first and second locations, in which the first parameter is indicative of an aging process of the power electronic device, and generates a first signal based on mined threshold. The data processor calculates a value for a second parameter based on the first parameter value, a predetermined look-up table, and the temperatures at the first and second locations, in which the second parameter is indicative of another aging process of the semiconductor switching devices, and generates a second signal based on a comparison of the calculated value and a second predetermined threshold.