Electrical & Computer Engineering, Department of


Date of this Version



Published in J. Appl. Phys. 68 (11), 1 December 1990. Copyright 1990 American Institute of Physics. Used by permission.


Three models for the dielectric function εx (hv) of AgxGa11-xAs are reviewed. All are based on measured optical constants at discrete compositions. The validity of each mode1 near critical pint energies, and otherwise, is evaluated. Only the energy-shift model is appropriate over the entire available spectrum ( 1.5-6.0 eV), including the band-gap (E0) region.