Electrical & Computer Engineering, Department of

 

Date of this Version

2-2021

Citation

Applied Physics Letters 118, 062103 (2021)

DOI: 10.1063/5.0031424

Comments

Copyright 2021 by AIP Publishing.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters 118, 062103 (2021) and may be found at https://doi.org/10.1063/5.0031424

Abstract

We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an α-Ga2O3 thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on m-plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73 eV to 8.75 eV are simultaneously analyzed. Density functional theory is used to calculate the valence and conduction band structure. We identify, for the indirect-bandgap material, two direct band-to-band transitions with M0-type van Hove singularities for polarization perpendicular to the c axis, E0,⊥=5.46(6) eV and E0,⊥=6.04(1) eV, and one direct band-to-band transition with M1-type van Hove singularity for polarization parallel to E0,∥=5.44(2) eV. We further identify excitonic contributions with a small binding energy of 7 meV associated with the lowest ordinary transition and a hyperbolic exciton at the M1-type critical point with a large binding energy of 178 meV.

Share

COinS