Electrical and Computer Engineering, Department of
Department of Electrical and Computer Engineering: Faculty Publications
Accessibility Remediation
If you are unable to use this item in its current form due to accessibility barriers, you may request remediation through our remediation request form.
Document Type
Article
Date of this Version
9-24-2021
Citation
iScience 24, 103050, September 24, 2021. https://doi.org/10.1016/j.isci. 2021.103050
Abstract
Two-dimensional crystals provide exceptional opportunities for integrating dissimilar materials and forming interfaces where distinct properties and phenomena emerge. To date, research has focused on two basic heterostructure types: vertical van der Waals stacks and laterally joined monolayer crystals with in-plane line interfaces. Much more diverse architectures and interface configurations can be realized in the few-layer and multilayer regime, and if mechanical stacking and single-layer growth are replaced by processes taking advantage of self-organization, conversions between polymorphs, phase separation, strain effects, and shaping into the third dimension. Here, we highlight such opportunities for engineering heterostructures, focusing on group IV chalcogenides, a class of layered semiconductors that lend themselves exceptionally well for exploring novel van der Waals architectures, as well as advanced methods including in situ microscopy during growth and nanometer-scale probes of light-matter interactions. The chosen examples point to fruitful future directions and inspire innovative developments to create unconventional van der Waals heterostructures beyond stacking.
Comments
Open access.