Ferroelectric switch for spin injection

Authors

Mikhail Ye. Zhuravlev, University of Nebraska-LincolnFollow
Sitaram Jaswal, University of NebraskaFollow
Evgeny Y. Tsymbal, University of Nebraska-LincolnFollow
Renat F. Sabirianov, University of Nebraska at OmahaFollow

Date of this Version

11-28-2005

Comments

Published by American Institute of Physics. Appl. Phys. Lett. 87, 222114 (2005). © 2005 American Institute of Physics. Permission to use. http://apl.aip.org/.

Abstract

A method for the switching of the spin polarization of the electric current injected into a semiconductor is proposed, based on injecting spins from a diluted magnetic semiconductor through a ferroelectric tunnel barrier. We show that the reversal of the electric polarization of the ferroelectric results in a sizable change in the spin polarization of the injected current, thereby providing a two-state electrical control of this spintronic device. We also predict a possibility of switching of tunneling magnetoresistance in magnetic tunnel junctions with a ferroelectric barrier and coexistence of tunneling magnetoresistance and giant electroresistance effects in these multiferroic tunnel junctions.