Department of Physics and Astronomy: Individual Faculty Pages
Kirill Belashchenko Publications
Accessibility Remediation
If you are unable to use this item in its current form due to accessibility barriers, you may request remediation through our remediation request form.
Document Type
Article
Date of this Version
10-2-2018
Citation
United States Patent No. US 10,090,034 B2
Date of Patent : Oct . 2 , 2018
Abstract
A magnetoelectric memory cell with domain - wall - mediated switching is implemented using a split gate architecture . The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic ( MEAF ) active layer . An extension of this architecture applies to multiple gate linear arrays that can offer advantages in memory density , programmability , and logic functionality . Applying a small anisotropic in - plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching
Included in
Atomic, Molecular and Optical Physics Commons, Condensed Matter Physics Commons, Engineering Physics Commons, Other Materials Science and Engineering Commons, Statistical, Nonlinear, and Soft Matter Physics Commons