Department of Physics and Astronomy: Publications and Other Research
Date of this Version
10-2-2018
Document Type
Article
Citation
United States Patent No. US 10,090,034 B2
Date of Patent : Oct . 2 , 2018
Abstract
A magnetoelectric memory cell with domain - wall - mediated switching is implemented using a split gate architecture . The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic ( MEAF ) active layer . An extension of this architecture applies to multiple gate linear arrays that can offer advantages in memory density , programmability , and logic functionality . Applying a small anisotropic in - plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching
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