Ce-doped EuO: Magnetic properties and the indirect band gap

Authors

Pan Liu, University of Wyoming
Jinke Tang, University of WyomingFollow
Juan A. Colon Santana, University of Nebraska-Lincoln
Kirill D. Belashchenko, University of Nebraska-LincolnFollow
Peter A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2011

Citation

JOURNAL OF APPLIED PHYSICS 109, 07C311 (2011); doi:10.1063/1.3544478

Comments

Copyright 2011 American Institute of Physics. Used by permission.

Abstract

We have prepared and investigated thin films of EuO doped with the rare-earth element cerium. X-ray diffraction, scanning electron microscopy, and energy dispersive x-ray spectroscopy were used to determine the quality of these films prepared by pulsed laser deposition. Ce doping leads to an enhanced Curie temperature near 150 K, close to that seen for oxygen-deficient EuO_1-x. However, the magnetization of Ce-doped EuO exhibits differences from that observed for Gd-doped and oxygen-deficient samples. The high-resolution angular-resolved photoemission from Ce-doped EuO reveals filling of conduction-band states near the X point. This indicates that the band gap in EuO is indirect, and that at 2% doping Ce-doped EuO_1-x is at least semimetallic.